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Brand Name : FORTUNE
Model Number : FS8205A
Certification : ROHS
Place of Origin : TAIWAN
MOQ : 10PCS
Price : NEGOTIABLE
Payment Terms : T/T, Western Union
Supply Ability : 12000PCS/WEEK
Delivery Time : 2-3DAYS
Packaging Details : 3000PCS/REEL
rain-Source Voltag : 20A
Drain Current (Continuous) : 6A
ate-Source Voltag : ±12
Drain Current (Pulsed) *1 : 30A
Total Power Dissipation @TA=25oC : 1.5W
Total Power Dissipation @TA=75oC : 0.96W
Operating and Storage Temperature Range : -55 to +150 ℃
Thermal Resistance Junction to Ambient*2 : 83℃/W
FS8205A Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)
1.Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V)
2.Features
RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A
 • High Density Cell Design for Ultra Low On-Resistance
 • High Power and Current Handing Capability
 • Fully Characterized Avalanche Voltage and Current
 • Ideal for Li ion Battery Pack Applications
3.Applications
Battery Protection
  Load Switch
 Power Management
4.SwitchingTest Circuit

5.TSSOP-8L Dimension

6.Why choose us?
100% new and originao with Advantage price
 High efficiency
 Fast Delivery
 Professional team service
 10 Years Experience Electronic components
 Electronic components Agent
 Advantage logistic discount
 Excellent After-sales Service
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                        FS8205A Dual N Channel Enhancement Mode MOSFET 20V 6A Images |